Redox-based resistive switching devices have promising properties for being used in digital memories. The highest data storage density can be achieved if they are integrated as a passive crossbar array. A major problem with this architecture is the occurrence of sneak path currents because they interfere with the read and write operations. This problem is avoided by complementary resistive switches because both data storage states have a similar resistance. A complementary resistive switch is realized by connecting two bipolar resistive switches anti serially.
The demonstrator can be controlled with five buttons on the left side. After pressing each button a short explanatory text is displayed below. For the manual operation mode, a slider for setting the voltage level can be found at the bottom of the page. The status of each resistive switch is shown by the CRS sketch in the center. The red triangle indicates that the cell is in a low resistive state. The voltage/time diagram plots the applied voltage. Switching events are induced if the threshold voltages, in dependence of the stored state, are exceeded. The resulting current-voltage characteristic is displayed in the lowermost plot.